View GP400DDM12_620141.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

GP400DDM12
GP400DDM12
Dual Switch IGBT Module Advance Information
DS5503-1.0 October 2001
FEATURES
s s s s
High Thermal Cycling Capability 400A Per Switch Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7V 400A 800A
APPLICATIONS
s s s s
High Reliability Inverters Motor Controllers Traction Drives Resonant Converters
5(E1)
1(E1)
2(C2) 12(C2)
6(G1)
11(G2)
7(C1)
10(E2) 3(C1) 4(E2)
The Powerline range of high power modules includes half bridge, dual, chopper and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP400DDM12 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Dual switch circuit diagram
5 6 3 7 8 1
ORDERING INFORMATION
Order As: GP400DDM12 Note: When ordering, please use the whole part number.
10 12
9 4 11 2
Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/9
www.dynexsemi.com
GP400DDM12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Tcase = 80C 1ms, Tcase = 105C Tcase = 25C, Tj = 150C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1200 20 400 800 3470 4000 Units V V A A W V
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm 8 C/kW 80 C/kW Min. Max. 36 Units C/kW
29
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP400DDM12
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC, Tcase = 50C tp = 1ms IF = 800A IF = 800A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 5.5 2.7 3.2 2.2 2.3 45 20 Max. 1 20 2 7.5 3.5 4 400 800 2.5 2.5 Units mA mA A V V V A A V V nF nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
www.dynexsemi.com
GP400DDM12
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 400A, VR = 50% VCES, dIF/dt = 2000A/s Test Conditions IC = 400A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 800 110 65 700 170 45 30 Max. Units ns ns mJ ns ns mJ C
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 400A, VR = 50% VCES, dIF/dt = 2000A/s Test Conditions IC = 400A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 1000 150 80 800 300 75 65 Max. Units ns ns mJ ns ns mJ C
49
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP400DDM12
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V 800 700 600 Common emitter Tcase = 25C 800 700 600 Collector current, IC - (A) 500 400 300 200 100 0 0 Common emitter Tcase = 125C
Vge = 20/15/12/10V
Collector current, IC - (A)
500 400 300 200 100 0 0
1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V)
5.0
1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V)
5.0
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
90
Conditions: V = 600V 80 T ce= 125C c Rg = 4.7 70 60 50 40 30 20 10 0 0 100 200 300 Collector current, IC - (A) 400 500 Eoff Eon
160 Conditions: Vce = 900V 140 IC = 400A Tc = 125C Switching energy, Esw - (mJ) 120 100 80 60 40 20 Eoff Eon 4 8 12 Gate Resistance, Rg - (Ohms) 16
Switching energy - (mJ)
0 0
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
www.dynexsemi.com
GP400DDM12
800 700 600 Tj = 25C 500 400 300 200 Tj = 125C
Collector current, IC - (A)
Forward current, IF - (A)
1000 900 800 700 600 500 400 300 200 Tcase = 125C Vge = 15V Rg = 4.7 * *Recommended minimum value 200 1000 600 400 800 Collector-emitter voltage, Vce - (V) 1200
100
100
0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 3.5
0 0
Fig.7 Diode typical forward characteristics
Fig.8 Reverse bias safe operating area
10000
100
Transient thermal impedance, Zth (j-c) - (C/kW )
Diode
1000
Collector current, IC - (A)
IC max. (single pulse)
Transistor
10
IC C .D ax m
100
tp = 50s tp = 100s
u uo tin on (c s)
1
10
tp = 1ms
1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000
0.1
1
10
100 Pulse width, tp - (ms)
1000
10000
Fig.9 Forward bias safe operating area
Fig.10 Transient thermal impedance
69
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP400DDM12
700
600
DC collector current, IC - (A)
500
400
300
200
100
0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
Fig.11 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/9
www.dynexsemi.com
GP400DDM12
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
62 15 15
62
13
5
65
6
24
3
16
1
11.85
7 8 9 4 2
18
12
26
13
11 10 14 11.5 35 20 4x M8 6x O7
6x M4
38 28
5 140 Main Terminal screw plastic hole depth (M8) = 16.8 0.3 Auxiliary and Gate pin plastic hole depth (M4) = 9 0.3 Copper terminal thickness, Main Terminal pins = 1.5 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 0.1 Nominal weight: 1050g Module outline type code: D
89
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
31.5
43.3 57 65
57
www.dynexsemi.com
GP400DDM12
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5503-1 Issue No. 1.0 October 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/9
www.dynexsemi.com

▲Up To Search▲

Price & Availability of GP400DDM12

	To Download GP400DDM12 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .